The accurate measurement of shallow (<0.2 μm) electrically active profiles is complicated by the effects of carrier diffusion which in some cases causes the carrier concentration profile calculated from spreading resistance (SR) data to be different from the impurity profile. This article describes analysis of SR data collected on shallow As profiles using the new analysis programsrp2.srp2is an analysis process which compares the measured SR data with SR data calculated from an assumed impurity profile. This assumed impurity profile is adjusted until the calculated SR profile matches the measured one. Thesrp2‐calculated electrical profiles agree well with independently simulated electrical profiles obtained using models which were calibrated to secondary ion mass spectrometry (i.e., nonelectrical profiles) and sheet resistance data. The distribution of the calculated SR data beyond the junction is found to be strongly dependent upon the assumed tail of the impurity distribution, and therefore provides a means of characterizing the electrically active low‐concentration tail (below 1×1016). The variation of the calculated spreading resistance with the assumed shape of the tail is illustrated and compared with measured SR data.