首页   按字顺浏览 期刊浏览 卷期浏览 Edge emission of CuGaSe2
Edge emission of CuGaSe2

 

作者: G. Masse´,   N. Lahlou,   N. Yamamoto,  

 

期刊: Journal of Applied Physics  (AIP Available online 1980)
卷期: Volume 51, issue 9  

页码: 4981-4984

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.328376

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The edge luminescence of CuGaSe2is studied on single crystals, from liquid helium temperature to room temperature. Time resolved spectroscopy measurements permit us to describe one of the emission bands in terms of donor‐acceptor pair transitions. Three other emission bands are observed. We attribute them to free‐to‐bound transitions. We determine three impurity levels: 110, 80, and 50 meV. Annealings in different atmospheres permit us to think that the 50‐meV level is due to a cation vacancy acting as an acceptor, and the 80‐meV level to a Se vacancy, which would act as a donor [Miglioratoetal., J. Appl. Phys. 46, 1777 (1975)].

 

点击下载:  PDF (283KB)



返 回