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Electrical conductivity of metallic selenium, tellurium, and silicon under high pressure

 

作者: K. J. Dunn,   F. P. Bundy,  

 

期刊: Journal of Applied Physics  (AIP Available online 1980)
卷期: Volume 51, issue 6  

页码: 3246-3249

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.328081

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The pressure induced metallic state of Se, Te, and Si has been studied using a cryogenic clamp press. The resistance versus temperature curves were analyzed and used for derivation of the characteristic temperature &Vthgr;. Good agreement was obtained between the experimental results and the Gru¨neisen‐Bloch relation for the resistance of metals.

 

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