Electrical conductivity of metallic selenium, tellurium, and silicon under high pressure
作者:
K. J. Dunn,
F. P. Bundy,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 6
页码: 3246-3249
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.328081
出版商: AIP
数据来源: AIP
摘要:
The pressure induced metallic state of Se, Te, and Si has been studied using a cryogenic clamp press. The resistance versus temperature curves were analyzed and used for derivation of the characteristic temperature &Vthgr;. Good agreement was obtained between the experimental results and the Gru¨neisen‐Bloch relation for the resistance of metals.
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