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High speed response of a GaAs metal‐semiconductor field‐effect transistor to electron‐beam excitation

 

作者: L. D. Flesner,   N. M. Davis,   H. H. Wieder,  

 

期刊: Journal of Applied Physics  （AIP Available online 1982）
卷期: Volume 53, issue 5  

页码: 3873-3877

 

ISSN:0021-8979

 

年代: 1982

 

DOI:10.1063/1.331087

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Subnanosecond current gain response of a GaAs power metal‐semiconductor field‐effect transistor to electron‐beam pulses is described. Two distinct gain mechanisms are deduced from the data.

 

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