Theoretical study of the Pd‐B complex in silicon
作者:
Ji‐an Wu,
Jie Zhou,
Da‐ren Zhang,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 11
页码: 7139-7141
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.344537
出版商: AIP
数据来源: AIP
摘要:
We report the results for the electronic structure of the interstitial Pd‐substitutional B complex in silicon. The self‐consistent field calculations were performed within the framework of scattered‐waveX&agr; cluster method. Compared with the electronic structures of the isolated substitutional B in silicon and of the isolated interstitial Pd in silicon, we found that the shallow acceptor B impurity state is deepened by the perturbation from the Pd atom. The ionic model, which is currently accepted to describe interstitial 3dtransition metal‐III A group shallow acceptor impurity pair, is not quite suitable to deal with the system of Pd‐B complex in silicon.
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