We use a highly accurate numerical computer model to solve the problem of equilibrium barrier formation in graded Hg1−xCdxTe heterojunctions including valence‐band offsets. The present calculation is an extension of our previous work [J. Appl. Phys.62, 3267 (1987)], which incorporated physical features designed to improve upon previous calculations, but employed the common anion rule. First, we analyze and compare our results to the recent work of Oda [Infrared Phys.27, 49 (1987)] and find significant differences. Then, we make a comparison with the results of our previous work. We observe clear trends between our results with and without the valence‐band offset. Unlike Oda, we do not make general predictions with regard to the conditions needed to support the formation and growth of a barrier in the conduction band, but instead find the band profiles to be a complex function of all the junction design parameters. For the present study involving narrow gappon wide gapnheterojunctions, and the assumed: HgTe:CdTe 300‐meV valence‐band offset, the band profiles do not differ significantly from the profiles assuming the common anion rule.