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Band offsets, defects, and dipole layers in semiconductor heterojunctions

 

作者: A. Zur,   T. C. McGill,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 3  

页码: 440-444

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582891

 

出版商: American Vacuum Society

 

关键词: HETEROJUNCTIONS;CRYSTAL DEFECTS;INTERFACES;DEPLETION LAYERS;PINNING;BAND STRUCTURE;INTERFACE PHENOMENA;SPECTRAL SHIFT;FERMI LEVEL;LAYERS;ELECTRIC DIPOLES;SEMICONDUCTOR MATERIALS

 

数据来源: AIP

 

摘要:

The role of defects in heterojunctions was investigated. The density of such defects required to pin the Fermi level or to affect the band offset was estimated using simple electrostatic considerations. We conclude that it is very unlikely that defects play any role in determining the band offsets, but they might affect the Fermi‐level position at the interface.

 

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