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Saturation of intraband absorption and electron relaxation time inn-doped InAs/GaAs self-assembled quantum dots

 

作者: S. Sauvage,   P. Boucaud,   F. Glotin,   R. Prazeres,   J.-M. Ortega,   A. Lemaı⁁tre,   J.-M. Ge´rard,   V. Thierry-Flieg,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 73, issue 26  

页码: 3818-3821

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.122904

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have observed the saturation of intraband absorption in InAs/GaAs self-assembled quantum dots. The investigatedn-doped self-assembled quantum dots exhibit an intraband absorption within the conduction band, which is peaked at an 8 &mgr;m wavelength. The saturation of the intraband absorption is achieved with an infrared pump delivered by a pulsed free-electron laser. The saturation of the transition is observed for an intensity around ≈0.6 MW&hthinsp;cm−2. The electron relaxation time under intraband excitation is measured by time-resolved pump–probe experiments. An electron relaxation timeT1≈3&hthinsp;psis reported. ©1998 American Institute of Physics.

 

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