Saturation of intraband absorption and electron relaxation time inn-doped InAs/GaAs self-assembled quantum dots
作者:
S. Sauvage,
P. Boucaud,
F. Glotin,
R. Prazeres,
J.-M. Ortega,
A. Lemaı⁁tre,
J.-M. Ge´rard,
V. Thierry-Flieg,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 26
页码: 3818-3821
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122904
出版商: AIP
数据来源: AIP
摘要:
We have observed the saturation of intraband absorption in InAs/GaAs self-assembled quantum dots. The investigatedn-doped self-assembled quantum dots exhibit an intraband absorption within the conduction band, which is peaked at an 8 &mgr;m wavelength. The saturation of the intraband absorption is achieved with an infrared pump delivered by a pulsed free-electron laser. The saturation of the transition is observed for an intensity around ≈0.6 MW&hthinsp;cm−2. The electron relaxation time under intraband excitation is measured by time-resolved pump–probe experiments. An electron relaxation timeT1≈3&hthinsp;psis reported. ©1998 American Institute of Physics.
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