A new procedure to profile deep‐level densities within the space‐charge region of Schottky barriers is presented. The method takes advantage of the spatial dependence of the time constant for the free‐electron capture by deep‐donor traps. The amplitude of the slow component of the capture capacitance transient following a negative reverse voltage pulse is simply related to the trap density at the point where the Fermi level crosses the trap level itself. The density profile of a given trap can be achieved by measuring the slow‐component transient signal as a function of the reverse voltage at a suitably chosen constant temperature. The estimated spatial resolution of the method was near 50 A˚ in a practical case. Experimental density profiles for EL14, EL8, EL3, and theEC−ET=0.37 eV level in Cr/GaAs and Al/GaAs Schottky barriers are presented and discussed. The procedure is expected to be also applicable to the case of trap densities comparable with the shallow‐donor density without introducing large errors.