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Metal‐semiconductor junctions and amorphous‐crystalline heterojunctions using B‐doped hydrogenated amorphous silicon

 

作者: Hideharu Matsuura,   Akihisa Matsuda,   Hideyo Okushi,   Tetsuhiro Okuno,   Kazunobu Tanaka,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 45, issue 4  

页码: 433-435

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.95248

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Investigated are the current‐voltage characteristics of metal (Au, Mg)/B‐doped hydrogenated amorphous silicon (a‐Si:H)/crystalline silicon (n+,p+) diodes for various doping levels of B ina‐Si:H. From junction studies we determine the conduction type of B‐dopeda‐Si:H on the basis of ‘‘dominant’’ carrier concentration, and find that thep‐ntransition occurs at B2H6/SiH4∼10−6although the conductivity minimum appears at B2H6/SiH4∼10−4.

 

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