Defect structure, distribution, and dynamics in diamond-on-silicon optoelectronic devices
作者:
M. C. Rossi,
S. Salvatori,
F. Galluzzi,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 3
页码: 1725-1731
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590043
出版商: American Vacuum Society
关键词: diamond
数据来源: AIP
摘要:
The role of localized defect centers and continuous gap states distribution in photoluminescence, photoconductivity, and photoresponse time dependence of diamond films have been analyzed for different film morphology and grain orientations. Sharp spectroscopic features related to impurity centers or broad components associated with continuous distribution of gap states prevail in the spectra depending on film microstructure and deposition technique. It is shown that defects, either localized or continuously distributed, reduce carrier lifetimes and slow down carrier transport by trapping effects. The observation of metastability effects after UV illumination giving an increase of subgap photoresponse is also reported.
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