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BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYS

 

作者: M. R. Lorenz,   W. Reuter,   W. P. Dumke,   R. J. Chicotka,   G. D. Pettit,   J. M. Woodall,  

 

期刊: Applied Physics Letters  （AIP Available online 1968）
卷期: Volume 13, issue 12  

页码: 421-423

 

ISSN:0003-6951

 

年代: 1968

 

DOI:10.1063/1.1652500

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The position of the (1, 0, 0) minima in InP are determined from measurements in the region of interconduction band absorption. Direct transition electroluminescence in the In1−xGaxP alloys is observed over a range of alloys up tox= 0.8 and photon energies of up to 2.2 eV at 300°K and is consistent with the bandstructure determined for InP and that of GaP.

 

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