Energy-gap narrowing in a current injected InGaN/AlGaN surface light emitting diode
作者:
G. Y. Zhao,
G. Yu,
T. Egawa,
J. Watanabe,
T. Jimbo,
M. Umeno,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 17
页码: 2424-2426
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120081
出版商: AIP
数据来源: AIP
摘要:
The emission spectrum of a current injected InGaN/AlGaN surface emitting diode has been investigated. A clear redshift of the low energy edge with increasing injected current has been observed, and is attributed to the many body effects. The carrier density and band gap narrowing are obtained by fitting the line shape of the emission spectrum, using Landsberg model which includes many body effects. A redshift of around 92 meV of the low energy edge is obtained as injected current increases from 400 to 4000 mA. The band gap change can be described well in proportion to the 1/3 power of the carrier density, which is just suggested by the exchange energy of electron–electron, and hole–hole interactions. ©1997 American Institute of Physics.
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