Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy
作者:
Huajie Chen,
R. M. Feenstra,
R. S. Goldman,
C. Silfvenius,
G. Landgren,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 14
页码: 1727-1729
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121165
出版商: AIP
数据来源: AIP
摘要:
Strain-compensated InGaAsP/InGaP superlattices are studied in cross section by atomic force microscopy and scanning tunneling microscopy. Undulations in the morphology of the {110} cross-sectional faces are observed, and are attributed to elastic relaxation of this surface due to underlying strain arising from thickness and compositional variations of the superlattice layers. Finite element computations are used to extract a quantitative measure of the strain variation. ©1998 American Institute of Physics.
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