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Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

 

作者: Huajie Chen,   R. M. Feenstra,   R. S. Goldman,   C. Silfvenius,   G. Landgren,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 72, issue 14  

页码: 1727-1729

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121165

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Strain-compensated InGaAsP/InGaP superlattices are studied in cross section by atomic force microscopy and scanning tunneling microscopy. Undulations in the morphology of the {110} cross-sectional faces are observed, and are attributed to elastic relaxation of this surface due to underlying strain arising from thickness and compositional variations of the superlattice layers. Finite element computations are used to extract a quantitative measure of the strain variation. ©1998 American Institute of Physics.

 

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