Formation of partially coherent antimony precipitates in ion implanted thermally annealed silicon
作者:
S. J. Pennycook,
J. Narayan,
O. W. Holland,
期刊:
Journal of Applied Physics
(AIP Available online 1983)
卷期:
Volume 54,
issue 12
页码: 6875-6878
ISSN:0021-8979
年代: 1983
DOI:10.1063/1.331992
出版商: AIP
数据来源: AIP
摘要:
Thermal annealing of a supersaturated solid solution of antimony in silicon results in the formation of partially coherent antimony precipitates. Transmission electron microscopy and microdiffraction studies show the precipitates to be bounded by {112} Si surfaces with the {111} Si and {1¯012} Sb planes coherent across the interface. The role of dislocations in the growth of the precipitates is discussed.
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