Refractory metal silicides andn+polysilicon/silicides are of particular interest for VLSI gate and interconnection technology. Reactive ion etching experiments have been conducted on sputter‐deposited films of MoSi2, CVDn+polysilicon, and thermal SiO2using admixtures of SF6with O2. The influence of partial pressure and total pressure on profile control and etch selectivity has been determined. Highly anisotropic etching ofn+polysilicon and MoSi2was obtained using a gas mixture of SF6plus 50% oxygen. Examples of 0.2μ anisotropically etched structures of silicides andn+polysilicon/silicide stacked films have been realized using electron beam lithography and one step dry etching. Mechanisms of profile control involved in the SF6/O2system are discussed. In addition, exploratory reactive ion etching studies using SiF4/Cl2gas mixtures for these materials and TaSi2have been carried out.