Data are presented demonstrating room‐temperature operation of a strained‐layer quantum‐well injection laser. The laser structure, grown by molecular beam epitaxy, consists of an active region with three InxGa1−xAs (x∼0.35) quantum wells (LZ∼40 A˚) separated by two GaAs barriers (LB∼30 A˚). These layers are centered in a larger GaAs collection/confinement region (LZ∼1600 A˚) bounded by AlyGa1−yAs ( y∼0.45) cladding layers. The lasers operate at &lgr;∼1.0 &mgr;m with greater than 4‐mW optical power output/facet under pulsed conditions at 300 K. Threshold current densities between 1000 and 2000 A/cm2are obtained.