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Theoretical and experimental investigation of hydrogen bonding configurations in Si

 

作者: W. B. Jackson,   S. B. Zhang,   C. C. Tsai,   C. Doland,  

 

期刊: AIP Conference Proceedings  （AIP Available online 1991）
卷期: Volume 234, issue 1  

页码: 37-44

 

ISSN:0094-243X

 

年代: 1991

 

DOI:10.1063/1.41011

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In this work, the local density total energy calculations of various bonding configurations for H in crystalline Si are used to develop a density of states for H trapping in amorphous silicon (a‐Si:H). This density of trapping states is compared with various experimental results and is used to interpret H transport measurements.

 

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