Method of separating hysteresis effects from MIS capacitance measurements
作者:
T. Nakagawa,
H. Fujisada,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 31,
issue 5
页码: 348-350
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89695
出版商: AIP
数据来源: AIP
摘要:
A new method is proposed to estimate interface state density in hysteretic MIS devices. In this method, a narrow bias‐voltage swing is applied around a certain center bias voltage to obtain a narrowC‐Vcurve without hysteresis. It is shown that the capacitance derivative obtained in this way depends on MIS capacitance only, and then can be used for determining the interface state density in the hysteretic InSb MIS devices.
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