This contribution deals with reactive growth of boron‐nitride films by a rf nitrogen‐sputtering process from a boron‐metal target; thus nitrogen is functioning both as sputter and reactive gas. Only few and superficial reports of reactive sputter depositions from a metallic boron target in various argon/nitrogen mixtures exist, compared to the number of reports on rf sputtering from a BN target. Nitrogen sputtering of boron‐metal has previously not been reported. It was shown by Fourier‐transform infrared (FTIR) spectroscopy that the hexagonal structure of BN exclusively was deposited. Sputter rates were measured and showed no dependence on the reactive‐gas flow and only a marginal dependence on sputter‐gas mixtures containing 20% of krypton, argon, or helium. The reported nitrogen‐sputtering process appears to be appropriate for exploration of the key parameters for phase control in BN growth and for additional surface engineering processes such as substrate bias and post‐ion bombardment. ©1995 American Institute of Physics.