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Monte Carlo simulation of channeling tails formation under heavy‐dose ion bombardment

 

作者: A. M. Mazzone,  

 

期刊: Journal of Applied Physics  （AIP Available online 1985）
卷期: Volume 57, issue 6  

页码: 2337-2339

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.334340

 

出版商: AIP

 

数据来源: AIP

 

摘要:

This work presents a Monte Carlo simulation of the ion distribution and of the damage growth in phosphorous‐implanted silicon. The calculation shows that channeling tails may form at doses well above the threshold for the formation of a continuous amorphous layer.

 

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