An attempt is made to derive model expressions of the gate capacitance of metal–oxide semiconductor structures inn‐channel inversion layers on ternary chalcopyrite semiconductors at low temperatures, takingn‐channel inversion layers on CdGeAs2as examples, under both the weak and strong electric field limits, respectively. It is found, on the basis of newly derived two‐dimensional electron energy spectra within the frame work ofk↘⋅p↘ formalism for both the limits by considering the anisotropies of the band parameters, that the gate capacitances increase with increasing surface electric field in an oscillatory manner and the crystal‐field splitting parameter enhances the numerical values of the gate capacitance for both the limits. In addition, the corresponding well‐known results forn‐channel inversion layers on parabolic energy bands are also obtained from the generalized expressions.