V-groove isolated b.i.f.e.t. technology for micropower i.c.s
作者:
S.D.S.Malhi,
C.A.T.Salama,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1980)
卷期:
Volume 127,
issue 4
页码: 169-175
年代: 1980
DOI:10.1049/ip-i-1.1980.0036
出版商: IEE
数据来源: IET
摘要:
This paper describes a V-groove isolated b.i.f.e.t. technology suitable for micropower integratedcircuit fabrication. The V-groove isolation technique offers considerable advantages in area and performance over standard junction isolated technology. The technology provides an ideal combination of active elements which include low pinchoff j.f.e.t.s and bipolar transistors. The characteristics of the devices as well as typical applications of the technology are described.
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