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Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si

 

作者: T. Y. Tan,   E. E. Gardner,   W. K. Tice,  

 

期刊: Applied Physics Letters  （AIP Available online 1977）
卷期: Volume 30, issue 4  

页码: 175-176

 

ISSN:0003-6951

 

年代: 1977

 

DOI:10.1063/1.89340

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Conditions for effective intrinsic gettering by oxide precipitate induced dislocations, which we suggest as an important mechanism in explaining device leakage limited yield enhancement due to oxygen in Czochralski‐grown Si wafers, are examined. The effectiveness of this mechanism is demonstrated.

 

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