Pd/Ti bilayer contacts to heavily doped polycrystalline silicon
作者:
Y. S. Tang,
C. D. W. Wilkinson,
C. Jeynes,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 72,
issue 1
页码: 311-312
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.352140
出版商: AIP
数据来源: AIP
摘要:
Ohmic contact properties of Pd/Ti bilayer to heavily dopedn+‐polycrystalline silicon, prepared by electron beam evaporation, were studied by using both electrical measurements and Rutherford backscattering spectroscopy. The electrical behavior of the contacts at different sintering conditions is explained by the corresponding chemical composition changes at the metal/silicon interface during the sintering process.
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