A resonant electron irradiation‐induced deep level SE0 in GaAs layers has been investigated by using 50–50 A˚ uniformly Si‐doped GaAs‐Ga0.7Al0.3As superlattices and characterized by deep level transient spectroscopy. The formation of a miniband in superlattices changes the forbidden band gap and allows some resonant defects in bulk materials such as SE0 in GaAs to be detected. In these superlattices, three electron irradiation induced deep levels SE0, SE1, and SE2 located in GaAs layers have been observed. In bulk GaAs only two levels, E1 and E2, corresponding to SE1 and SE2 can be detected, since SE0 is a resonant level in bulk GaAs, situated 60 meV above the GaAs conduction band edge. ©1995 American Institute of Physics.