Disordering of ZnSe/ZnS strained‐layer superlattices by Si ion implantation
作者:
Tohru Saitoh,
Toshiya Yokogawa,
Tadashi Narusawa,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 8
页码: 735-737
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101790
出版商: AIP
数据来源: AIP
摘要:
Disordering of ZnSe/ZnS strained‐layer superlattices(SLSs) induced by Si ion implantation and subsequent low‐temperature thermal annealing was confirmed. Si ions were implanted (100 keV, 1×1016ions/cm2) into SLSs (140 A˚ ZnSe‐140 A˚ ZnS, ten periods). By secondary‐ion mass spectrometry analyses, periodic profiles of Se and S were clearly observed just after the ion implantation; however, they disappeared after subsequent thermal annealing (450 °C, 3 h). Photoluminescence measurements showed the peak of ZnSxSe1−xalloyed crystal after thermal annealing. The disordering is mainly induced by the diffusion of defects generated by the ion implantation at the early stage of low‐temperature thermal annealing. This low temperature and planar process will be very useful to the fabrication of II‐VI compound semiconductor optical and electrical devices.
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