Surface extended x‐ray adsorption fine structure studies of the Si(001) 2×1–Sb interface
作者:
M. Richter,
J. C. Woicik,
P. Pianetta,
K. E. Miyano,
T. Kendelewicz,
C. E. Bouldin,
W. E. Spicer,
I. Lindau,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1991)
卷期:
Volume 9,
issue 3
页码: 1951-1955
ISSN:0734-2101
年代: 1991
DOI:10.1116/1.577433
出版商: American Vacuum Society
关键词: ANTIMONY;FILMS;SILICON;SURFACES;MICROSTRUCTURE;X−RAY SPECTRA;ABSORPTION SPECTRA;FINE STRUCTURE;AUGER ELECTRON SPECTROSCOPY;SCANNING ELECTRON MICROSCOPY;TUNNEL EFFECT;ANNEALING;ELECTRON DIFFRACTION;Si;Sb
数据来源: AIP
摘要:
Surface extended x‐ray adsorption fine structure (SEXAFS) has been used to investigate the structure of Sb on the Si(001) 2×1 surface. The coverage of Sb which remains after annealing thick layers at 375 °C, previously reported to be one monolayer (ML), is found in this work to form a disordered overlayer with three dimensional Sb clusters. This finding is concluded from the SbL3absorption spectra which are similar for this coverage to that of bulk Sb. After a 550 °C anneal, Auger electron spectroscopy, and scanning tunneling microscopy (STM) show that about 1 ML of Sb remains. Phase and amplitude analysis of the SbL3edge SEXAFS shows that the remaining Sb atoms occupy a modified bridge site with a Si–Sb bond length of 2.63±0.04 Å. The Sb atoms form dimers with a Sb–Sb bond length of 2.91±0.04 Å, which is almost identical to the bulk Sb–Sb bond length of 2.90 Å. The Sb atoms lie 1.74±0.06 Å above the Si(001) surface. STM confirms the dimer structure of the Sb overlayer.
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