A continuousp‐type GaAs epilayer has been deposited on ann‐type sawtooth GaAs surface using metalorganic chemical vapor deposition. A wet chemical etching process was used to expose the intersecting (111)Ga and (1¯1¯1)Ga planes with 6 &mgr;m periodicity. Charge collection microscopy was used to verify the presence of thepnjunction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V‐groove GaAs cell with improved absorptivity, high short‐circuit current, and tolerance to particle radiation.