Metastable behavior of deep levels in hydrogenated GaAs
作者:
Hoon Young Cho,
Eun Kyu Kim,
Suk‐Ki Min,
K. J. Chang,
Choochon Lee,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 17
页码: 1866-1868
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105056
出版商: AIP
数据来源: AIP
摘要:
New metastable behavior of deep levels is found in hydrogenated GaAs doped with Si. A deep level at 0.60 eV below the conduction‐band minimum (Ec) is generated during hydrogenation and shows metastable for theEc− 0.42 eV trap. From the defect transformations observed in biased anneals, these defects are found to be metastable defects associated with hydrogen atoms. Especially, the 400 K biased‐anneal experiments indicate that anEc−0.33 eV trap could be an electric field induced defect, transformed from other intrinsic defects. TheEc− 0.60 eV trap in hydrogenated GaAs could be a hydrogen complex associated withEc− 0.42 eV trap and the hydrogen atom plays an important role in a metastability of deep level defects in GaAs.
点击下载:
PDF
(419KB)
返 回