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Hydrogen incorporation behaviour and radiation damage in proton bombarded InP single crystals

 

作者: C. Ascheron,   V. Riede,   H. Sobotta,   H. Neumann,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1990）
卷期: Volume 115, issue 1-3  

页码: 145-155

 

ISSN:1042-0150

 

年代: 1990

 

DOI:10.1080/10420159008220563

 

出版商: Taylor & Francis Group

 

关键词: InP;hydrogen implantation;radiation damage;infrared absorption;annealing;hydrogen bonding

 

数据来源: Taylor

 

摘要:

In proton bombarded InP single crystals the incorporation behaviour of different hydrogen isotopes is studied in relation to implantation induced radiation defects. Investigations of the fluence dependence (D= 1016-1018cm−2), of the depth profile and of the annealing behaviour (Tan= 300–1000 K) of hydrogen incorporation and of damage density indicate that only a small fraction of the implanted hydrogen is chemically bonded to host lattice atoms. These bonded hydrogen atoms saturate dangling bonds at defect sites.

 

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