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Techniques for the measurement of source and drain series resistance in m.o.s. transistors

 

作者: P.J.T.Mellor,  

 

期刊: Proceedings of the Institution of Electrical Engineers  （IET Available online 1971）
卷期: Volume 118, issue 10  

页码: 1393-1398

 

年代: 1971

 

DOI:10.1049/piee.1971.0261

 

出版商: IEE

 

数据来源: IET

 

摘要:

Three methods for measuring the source and drain resistance of m.o.s. transistors operating in the unsaturated region are described. The results obtained on a number of simple m.o.s. transistors are presented to illustrate and compare each method and to indicate the significance of such measurements.

 

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