首页   按字顺浏览 期刊浏览 卷期浏览 Observation of the superstructure at the Al–GaAs(001) interface by synchrotron x‐ray di...
Observation of the superstructure at the Al–GaAs(001) interface by synchrotron x‐ray diffraction

 

作者: J. Mizuki,   K. Akimoto,   I. Hirosawa,   K. Hirose,   T. Mizutani,   J. Matsui,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 1  

页码: 31-33

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.583988

 

出版商: American Vacuum Society

 

关键词: INTERFACE STRUCTURE;X−RAY DIFFRACTION;SYNCHROTRON RADIATION;ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;BRAGG REFLECTION;SURFACE RECONSTRUCTION;GaAs;Al

 

数据来源: AIP

 

摘要:

The superstructure at the Al–GaAs(001) interface has been observed for the first time by grazing incidence x‐ray diffraction with the use of a synchrotron source. The Al overlayer of 150 Å in thickness was deposited on the (4×6)‐reconstructed (001) GaAs surface. The Bragg peaks were observed at the fractional‐order reciprocal lattice points of (n/4l) in the [11̄0] direction and (0m/6) in the [1̄1̄0] direction. The discussion is addressed to the correlation between interface reactions and the stability of the superstructure at the interface.

 

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