Experimental characteristics of ultrashallown+pjunctions manufactured by vacuum evaporation of antimony (Sb) and silicon (Si), followed by heat treatments to recrystallize the amorphous silicon, are presented. It is found that then+pjunction is located less than 300 A˚ inside the crystalline silicon and that all Sb is redistributed within the regrown film. Comparisons with Schottky (Sb‐Si) diodes show that with a heat treatment at 900 °C, the diodes convert fully from Schottky type ton+ptype. Furthermore, normally off‐type junction field‐effect transistors have been fabricated using thesen+pjunctions as gate junctions, and the characteristics are presented together with data concerning threshold voltage variations. Also, the subthreshold characteristics of these junction field‐effect transistors are presented. The behavior in the subthreshold region is found to be excellent.