Influence of ionising irradiation on the channel mobility of MOS transistors
作者:
A.Bellaouar,
G.Sarrabayrouse,
P.Rossel,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1985)
卷期:
Volume 132,
issue 4
页码: 184-186
年代: 1985
DOI:10.1049/ip-i-1.1985.0040
出版商: IEE
数据来源: IET
摘要:
The influence of an ionising irradiation on the channel mobility of a MOS transistor is experimentally investigated as a function of both the oxide layer thickness and the electric field in the insulating layer during irradiation. The previously proposed empirical formula for the dependency of the low field mobility on the created charge is made more precise.
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