Impedance studies on Li insertion electrodes of Sn oxide and oxyfluoride
作者:
M. Stro&slash;mme,
J. Isidorsson,
G. A. Niklasson,
C. G. Granqvist,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 1
页码: 233-241
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.362809
出版商: AIP
数据来源: AIP
摘要:
Films of Sn oxide and oxyfluoride were made by reactive rf magnetron sputtering onto ITO‐coated glass. We analyzed the composition by Rutherford backscattering spectrometry, the structure by x‐ray diffraction, and the surface topography by atomic force microscopy. Li intercalation from a liquid electrolyte was more facile in the oxide than in the oxyfluoride, as found from cyclic voltammetry. Impedance spectra were taken for a wide range of frequencies and polarizing voltages. Nyqvist diagrams were interpreted from a circuit model with elements representing Li insertion at the electrolyte/film interface and electron insertion at the film/ITO interface. The data were consistent with a fractal surface of the Sn oxide film, with a dimension in excellent agreement with measures obtained through several independent techniques. The chemical diffusion coefficient was ∼10−13cm2/s and slightly decreasing with increasing potential for all films. ©1996 American Institute of Physics.
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