We report the first room‐temperature pulsed oscillation of a GaAlAs/GaAs surface emitting injection laser. A ring electrode of which the outer/inner diameter is 20 &mgr;m/10 &mgr;m has been introduced to distinguish a mirror and Ohmic contact in order to increase the reflectivity. The threshold current was as low as 510 mA at room temperature under pulsed conditions. The cavity length was 7 &mgr;m and single longitudinal mode operation was achieved at &lgr;=8740 A˚ against the temperature variation of 80 K.