We have found that, with proper pregrowth surface treatment, 6H‐SiC single‐crystal films can be grown by chemical vapor deposition (CVD) at 1450 °C on vicinal (0001) 6H‐SiC with tilt angles as small as 0.1°. Previously, tilt angles of greater than 1.5° were required to achieve 6H on 6H at this growth temperature. In addition, 3C‐SiC could be induced to grow within selected regions on the 6H substrate. The 3C regions contained few (or zero) double‐positioning boundaries and a low density of stacking faults. A new growth model is proposed to explain the control of SiC polytype in this epitaxial film growth process.