Influence of Ti interfacial layers on the electrical and microstructural properties of SOL-gel prepared PZT films
作者:
C.J. Rawn,
E.A. Kneer,
D.P. Birnie,
M.N. Orr,
R.D. Schrimpf,
G. Teowee,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 6,
issue 1-4
页码: 111-119
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508019357
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Sol-gel derived lead zirconate titanate (PZT) thin films were deposited onto monolithic Pt bottom electrodes which used Ti interlayers for Pt adhesion on thermally oxidized ⟨111⟩ Si. The rf-sputter deposited Pt/Ti films were annealed at 400° – 600°C for 15 minutes. Atomic Force Microscopy (AFM) was used to analyze the Pt surface features. Transmission Electron Microscopy (TEM), transmission electron diffraction, scanning transmission electron microscopy (STEM), and scanning electron microscopy (SEM) were used to investigate the microstructure of PZT films crystallized onto these electrodes. RT-66A testing was conducted to evaluate the electrode performance of the Pt/PZT/Pt structure devices. It was found that the lower temperature bottom electrode anneal created a more dense, smaller grained nucleated PZT film.
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