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Optical transitions between light hole subbands in InGaAs/InP strained layer multiquantum wells

 

作者: I. Ilouz,   J. Oiknine‐Schlesinger,   D. Gershoni,   E. Ehrenfreund,   D. Ritter,   R. A. Hamm,   J. M. Vandenberg,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 66, issue 17  

页码: 2268-2270

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113188

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The observation of light hole intersubband absorption in bothp‐doped and photoexcited undoped strained InxGa1−xAs/InP (x&bartil;0.35) quantum‐well structures is reported. The absorption is polarized along the growth direction and is in agreement with calculations which show that the strain causes the light hole level to be first occupied uponp‐doping or photoexcitation. Both impurity bound and free holes transitions are identified. ©1995 American Institute of Physics.

 

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