Summary Abstract: Reflection high‐energy electron diffraction intensity oscillation during the growth of GaAs by chemical‐beam epitaxy

 

作者: T. H. Chiu,   W. T. Tsang,   J. E. Cunningham,   A. Robertson,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 2  

页码: 642-643

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584377

 

出版商: American Vacuum Society

 

关键词: GaAs

 

数据来源: AIP

 

 

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