Results obtained by x‐ray diffractometry, topography, and curvature measurements made with a quadruple‐crystal x‐ray diffractometer used in (+,−,+) setting and as a Lang system are reported. About 0.1‐mm‐thick semi‐insulating (SI) (Cr‐compensated) andn‐type wafers with dimensions ∼10×10 mm2or less were used. The metallizations were (i) Ge‐Ni‐WSi2‐Au and (ii) Ge‐Au‐Ni‐WSi2‐Au, with layer thicknesses as follows: Ge: 20 nm; Au: 5 nm; Ni: 10 nm; WSi2: 100 nm; and Au: 100 nm. Both types of metallizations were deposited onn‐type crystals, whereas only the second type was used with SI wafers. Diffraction curve half‐widths of the wafers without deposits were in the range 15–22 arcsec (SI) and 18–30 arcsec (ntype). Radii of curvature (R) were around 6 and 3 m for SI andn‐type crystals, respectively. Topographs showed low defect density. Metallization decreased the level of perfection and enhanced curvature. Diffraction curve half‐widths increased up to 155 arcsec (SI) and 180 arcsec (ntype). High‐strain field and bandlike features were observed in topographs, indicating nonhomogeneous distribution of strain.Rvalues decreased to 0.8 m (SI) and 0.3 m (ntype). These correspond to stress values of 1.7×1010and 4.5×1010dyn cm−2, respectively. Anisotropy inRvalues was studied by changing diffracting planes. Lattice planes parallel to the metallization were also curved, but in small regions the degree of perfection was high. The five‐layered metallization produced more stress inn‐type crystals in comparison to the other deposit.