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SOLAR CELLS IN THIN EPITAXIAL LAYERS ON METALLURGICAL SILICON SUBSTRATES

 

作者: E. DEMESMAEKER,   M. CAYMAX,   R. MERTENS,   LE QUANG NAM,   M. RODOT,  

 

期刊: International Journal of Solar Energy  （Taylor Available online 1992）
卷期: Volume 11, issue 1-2  

页码: 37-53

 

ISSN:0142-5919

 

年代: 1992

 

DOI:10.1080/01425919208909728

 

出版商: Taylor & Francis Group

 

关键词: KEY WORDS: Solar cells;UMG-Si;epilayer;BSF;texturing;cell-modeling

 

数据来源: Taylor

 

摘要:

Conversion efficiencies of 11.5-12% have been obtained for solar cells with an active layer epitaxially grown on upgraded metallurgical grade silicon substrates made by industry. An epilayer thickness of 30 μm was shown to be sufficient if the substrate doping is much larger than the epilayer doping. Spectral response measurements, fitted to simple models, showed that:

 

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