A two‐band conduction model is used to determine the properties of shallow‐type impurity semiconductors in the presence of microwave and dc magnetic fields as a function of temperature. Measurements using cavity perturbation techniques are employed to determine the properties ofn‐type InSb and theoretical and experimental results between 4 and 300 °K are compared. The hot‐electron effect was found to be insignificant between 77 and 300 °K, and the scattering mechanisms are dominated by acoustic and polar modes over the same temperature range.