Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2or Si++B+
作者:
M. Y. Tsai,
B. G. Streetman,
期刊:
Journal of Applied Physics
(AIP Available online 1979)
卷期:
Volume 50,
issue 1
页码: 183-187
ISSN:0021-8979
年代: 1979
DOI:10.1063/1.325688
出版商: AIP
数据来源: AIP
摘要:
Electrical properties of recrystallized amorphous silicon layers, formed by BF+2implants or Si++B+implants, have been studied by differential resistivity and Hall‐effect measurements. Electrical carrier distribution profiles show that boron atoms inside the amorphized Si layers can be fully activated during recrystallization at 550 °C. The mobility is also recovered. However, the tail of the B distribution, located inside a damaged region near the original amorphous‐crystalline interface, remains inactive. This inactive tail has been observed for all samples implanted with BF+2. Only in a thicker amorphous layer, formed for example by Si+predamage implants, can the entireBprofile be activated. The etch rate of amorphous silicon in HF and the effect of fluorine on the recrystallization rate are also reported.
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