Reactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance methane/hydrogen/nitrogen/silicon tetrachloride discharges at room temperature
作者:
J. R. Sendra,
J. Anguita,
J. J. Pe´rez‐Camacho,
F. Briones,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 22
页码: 3289-3291
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115223
出版商: AIP
数据来源: AIP
摘要:
Reactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance plasma using methane/hydrogen/nitrogen/silicon tetrachloride (CH4/H2/N2/SiCl4) mixtures has been performed at room temperature. Due to the ratio of chlorine to methane, formation of an indium chloride layer on the etched surface is avoided, thus resulting, in etched surfaces as smooth as the original ones and flat mesa sidewalls. Infrared diodes (2.3&mgr;m) have been fabricated using this etching technology. ©1995 American Institute of Physics.
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