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Growth of Si1−xGexby rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors

 

作者: J. C. Sturm,   P. V. Schwartz,   E. J. Prinz,   H. Manoharan,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 4  

页码: 2011-2016

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585395

 

出版商: American Vacuum Society

 

关键词: CHEMICAL VAPOR DEPOSITION;SUPERLATTICES;SILICON ALLOYS;GERMANIUM ALLOYS;BINARY ALLOYS;TEMPERATURE EFFECTS;HIGH TEMPERATURE;BIPOLAR TRANSISTORS;HETEROJUNCTIONS;(SiGe)

 

数据来源: AIP

 

摘要:

Rapid thermal chemical vapor deposition has been applied towards the growth of Si and Si1−xGexstructures on a 100 Å scale. In this paper the relative merits of gas switching versus temperature switching for the growth of such structures are discussed. Active temperature control in the 600–700 °C range using infrared transmission for temperature measurement is demonstrated. The growth technique is applied to 45 Å period superlattices with individual layer temperature control, and to heterojunction bipolar transistors with near‐ideal electrical characteristics.

 

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