Transient spectroscopy using the Hall effect
作者:
Z. Kachwalla,
D. J. Miller,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 20
页码: 1438-1440
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97847
出版商: AIP
数据来源: AIP
摘要:
The Hall effect is used to measure the transient change in the carrier concentration in a semiconductor sample due to the thermal emission from states filled by a pulsed perturbation. This method has several advantages over other methods based on measuring the capacitance transient or the current transient. The identity of the released carriers can be determined from the sign of the Hall voltage. The new method is applied to the measurement of traps in epitaxial GaAs.
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