Photoluminescence study on twentyGaAs/Al0.3Ga0.7Astilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy
作者:
N. Tomita,
K. Takekawa,
K. Ohta,
S. Shimomura,
S. Hiyamizu,
K. Fujita,
N. Egami,
Y. Okamoto,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 2
页码: 575-577
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.589866
出版商: American Vacuum Society
关键词: (Al,Ga)As
数据来源: AIP
摘要:
TwentyGaAs/Al0.3Ga0.7As tilted T-shaped quantum wires (T-QWRs) on a (111)B facet were uniformly fabricated with a two-step growth of molecular beam epitaxy (MBE), which consists of a glancing-angle MBE ofGaAs/Al0.3Ga0.7As multi-quantum well layer with 20 GaAs wells (a well width ofLw=6.1 nm) on reverse-mesa stripes on a (001) GaAs substrate and MBE overgrowth of aGaAs/Al0.3Ga0.7Assingle-quantum well withLw=6.3 nmon a (111)B facet. Full width at half maximum of a photoluminescence peak(λ=792 nm)from the tilted T-QWRs was as small as 8.7 meV at 28 K, which is comparable with those (6 meV,Reference 5 10 meVReference 10) of conventionalGaAs/Al0.3Ga0.7As T-QWRs (6.8 nm/5.8 nm, 7 nm/7 nm) fabricated by the cleaved-edge overgrowth.
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