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Contact resistance monitor for silicon integrated circuits

 

作者: T. J. Faith,   R. S. Irven,   L. H. Reed,   J. J. O’Neill,   M. C. Jones,   B. B. Levin,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 1  

页码: 54-57

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582915

 

出版商: American Vacuum Society

 

关键词: contact potential;integrated circuits;metallization;silicon;aluminium;phosphorus ions;metal−semiconductor contacts;electric conductivity;ion implantation;iv characteristic;fabrication

 

数据来源: AIP

 

摘要:

Chronic problems have been experienced in integrated circuit fabrication lines in the formation of Ohmic contacts between Al–Si interconnect metallization and device (bulk or epi) silicon. One of the reasons for such problems has been the absence of a simple and reliable method for predicting, immediately after metal deposition, whether or not the contact resistances in the finished circuits will be satisfactory. This paper describes and demonstrates such a method for (Al–1% Si)/(phosphorus‐implanted)n+Si contacts.

 

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